Yb: YAG is more suitable for diode-pumping than the traditional Nd-doped systems. It can be pumped at 0.94 μm laser output. Compared with the commonly used Nd:YAG crystal, Yb:YAG crystal has a much larger absorption bandwidth to reduce thermal management requirements for diode lasers, a longer upper-state lifetime, three to four times lower thermal loading per unit pump power. Yb:YAG crystal is expected to replace Nd:YAG crystal for high power diode-pumped lasers and other potential applications.




• Very low fractional heating, less than 11%

• Very high slope efficiency

• Broad absorption bands, about 8nm@940nm

• No excited-state absorption or up-conversion

• Conveniently pumped by reliable InGaAs diodes at 940nm(or 970nm)

• High thermal conductivity and large mechanical strength

• High optical quality


Our capability:


Doping(atm%):  1.0% ~ 35%
Orientation:  <111> or  <100>  crystalline direction
Wavefront Distortion:  λ/10 per inch @ 632.8 nm
Dimension Tolerances:  Diameter: +0.0/-0.05 mm , Length: ±0.1 mm
Surface Quality:  10/5 Scratch/Dig
Parallelism:  < 10″
Perpendicularity:  < 5′
Clear Aperture:  > 90%
Surface Flatness:  < λ/10 @ 632.8 nm
Chamfer:  < 0.1 mm @ 45o
Barrel Finish:  50-80 micro-inch (RMS) ,
Size  Upon customer request
Coating  Upon customer request
Damage Threshold  750MW/CM2 at 1064nm, TEM00, 10ns, 10Hz